Zn incorporation in CuInSe2: Particle size and strain effects on microstructural and electrical properties

Bulletin of materials science

S Mehdaoui²  M Benabdeslem²  A Bouasla²  O Aissaoui²  X Portier³  M Fromm¹  L Bechiri²  A Djekoun²  N Benslim² 

[1]Centre de Microanalyse Nucléaire, UFR Science and Techniques, 16 route de Gray, 25030 Besançon, France$$Centre de Microanalyse Nucléaire, UFR Science and Techniques, 16 route de Gray, 25030 Besançon, FranceCentre de Microanalyse Nucléaire, UFR Science and Techniques, 16 route de Gray, 25030 Besançon, France$$

[2]Laboratoire LESIMS, Université d’Annaba, BP12, 23200 Sidi Amar, Algerie$$Laboratoire LESIMS, Université d’Annaba, BP12, 23200 Sidi Amar, AlgerieLaboratoire LESIMS, Université d’Annaba, BP12, 23200 Sidi Amar, Algerie$$

[3]CIMAP, ENSICAEN/Université de Caen, 6-Bd du Maréchal Juin 14050, Caen, France$$CIMAP, ENSICAEN/Université de Caen, 6-Bd du Maréchal Juin 14050, Caen, FranceCIMAP, ENSICAEN/Université de Caen, 6-Bd du Maréchal Juin 14050, Caen, France$$

关键词: CuInSe2;    doping;    zinc;    Williamsonâ€�?�Hall;    high frequency.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Incorporation of the doping element Zn in the temperature range (550â€�??700 °C) and the impact on structural and electrical properties of CuInSe₂ material are investigated. X-ray diffraction patterns showed the chalcopyrite nature of the pure and doped CuInSe₂ and revealed that diffusion temperature governs particle size as well as tensile strain. The calculated lattice parameters and cell volumes revealed that Zn diffuses in CuInSe₂ by substitution on Cu sites. Electrical properties of the material have been investigated using a contact-less technique based on high frequency microwave (HF). It is found that Zn atoms influence the defect equilibrium resulting in the conversion of the conduction type. The conductivity of the samples has been found increasing as the diffusion temperature increases.

【 授权许可】

Unknown