Experiment and prediction on thermal conductivity of Al2O3/ZnO nano thin film interface structure

Bulletin of materials science

Ping Yang²  Haiying Yang¹  Liqiang Zhang²  Xialong Li²  Dongjing Liu² 

[1] School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, P. R. China$$School of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, P. R. ChinaSchool of Materials Science and Engineering, Jiangsu University, Zhenjiang 212013, P. R. China$$;Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, P. R. China$$Laboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, P. R. ChinaLaboratory of Advanced Manufacturing and Reliability for MEMS/NEMS/OEDS, School of Mechanical Engineering, Jiangsu University, Zhenjiang 212013, P. R. China$$

关键词: Al2O3/ZnO nano thin film;    thermal conductivity (TC);    nanoscale;    interface structure.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

We predict that there is a critical value of Al₂O₃/ZnO nano thin interface thickness based on two assumptions according to an interesting phenomenon, which the thermal conductivity (TC) trend of Al₂O₃/ZnO nano thin interface is consistent with that of relevant single nano thin interface when the nano thin interface thickness is > 300 nm; however, TC of Al₂O₃/ZnO nano thin interface is higher than that of relevant single nano thin interface when the thin films thickness is < 10 nm. This prediction may build a basis for the understanding of interface between two different oxide materials. It implies an idea for new generation of semiconductor devices manufacturing.

【 授权许可】

Unknown