Effects of thickness on electronic structure of titanium thin films

Bulletin of materials science

Güvenç Akgül¹ 

[1] Bor Vocational School, Nigde University, 51700 Nigde, Turkey$$Bor Vocational School, Nigde University, 51700 Nigde, TurkeyBor Vocational School, Nigde University, 51700 Nigde, Turkey$$

关键词: NEXAFS;    titanium;    branching ratio;    electron escape depth;    thin films.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Effects of thickness on the electronic structure of e-beam evaporated thin titanium films were studied using near-edge X-ray absorption fine structure (NEXAFS) technique at titanium 𝐿_2,3 edge in total electron yield (TEY) mode and transmission yield mode. Thickness dependence of 𝐿_2,3 branching ratio (BR) of titanium was investigated and it was found that BR below 3.5 nm shows a strong dependence on film thickness. Mean electron escape depth (ðœ�?) in titanium, an important parameter for surface applications, was determined to be ðœ�? = 2.6 ± 0.1 nm using 𝐿_2,3 resonance intensity variation as a function of film thickness. The average 𝐿₃/𝐿₂ white line intensity ratio of titanium was obtained as 0.89 from the ratio of amplitudes of each 𝐿₃ and 𝐿₂ peaks and 0.66 from the integrated area under each 𝐿₃ and 𝐿₂ peaks. In addition, a theoretical calculation for pure titanium was presented for comparison with experimental data.

【 授权许可】

Unknown