High growth rate of a-SiC:H films using ethane carbon source by HW-CVD method

Bulletin of materials science

Habib M Pathan³  Mahesh M Kamble⁴  T Shripathi²  Sandesh R Jadkar³  Azam Mayabadi⁴  Sanjay S Ghosh⁴  Vaishali S Waman¹  Vasant G Sathe² 

[1] School of Energy Studies, University of Pune, Pune 411 007, India$$Department of Physics, Modern College, Pune 411 005, India$$School of Energy Studies, University of Pune, Pune 411 007, IndiaSchool of Energy Studies, University of Pune, Pune 411 007, India$$Department of Physics, Modern College, Pune 411 005, India$$Department of Physics, Modern College, Pune 411 005, IndiaSchool of Energy Studies, University of Pune, Pune 411 007, India$$Department of Physics, Modern College, Pune 411 005, India$$;UGC-DAE-CSR, University Campus, Khandawa Road, Indore 452 017, India$$UGC-DAE-CSR, University Campus, Khandawa Road, Indore 452 017, IndiaUGC-DAE-CSR, University Campus, Khandawa Road, Indore 452 017, India$$;Department of Physics, University of Pune, Pune 411 007, India$$Department of Physics, University of Pune, Pune 411 007, IndiaDepartment of Physics, University of Pune, Pune 411 007, India$$;School of Energy Studies, University of Pune, Pune 411 007, India$$School of Energy Studies, University of Pune, Pune 411 007, IndiaSchool of Energy Studies, University of Pune, Pune 411 007, India$$

关键词: a-SiC:H thin films;    HW-CVD;    FTIR spectroscopy;    X-ray photoelectron spectroscopy (XPS);    Raman spectroscopy.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Hydrogenated amorphous silicon carbide (a-SiC:H) thin films were prepared using pure silane (SiH₄) and ethane (C₂H₆), a novel carbon source, without hydrogen dilution using hot wire chemical vapour deposition (HW-CVD) method at low substrate temperature (200 °C) and at reasonably higher deposition rate (19.5 Ã�?/s < ð‘�?_d < 35.2 Ã�?/s). Formation of a-SiC:H films has been confirmed from FTIR, Raman and XPS analysis. Influence of deposition pressure on compositional, structural, optical and electrical properties has been investigated. FTIR spectroscopy analysis revealed that there is decrease in Câ€�?�H and Siâ€�?�H bond densities while, Siâ€�?�C bond density increases with increase in deposition pressure. Total hydrogen content drops from 22.6 to 14.4 at.% when deposition pressure is increased. Raman spectra show increase in structural disorder with increase in deposition pressure. It also confirms the formation of nearly stoichiometric a-SiC:H films. Bandgap calculated using both Tauc’s formulation and absorption at 10⁴ cm^-1 shows decreasing trend with increase in deposition pressure. Decrease in refractive index and increase in Urbach energy suggests increase in structural disorder and microvoid density in the films. Finally, it has been concluded that C₂H₆ can be used as an effective carbon source in HW-CVD method to prepare stoichiometric a-SiC:H films.

【 授权许可】

Unknown