Fermi-edge singularity in photoluminescence spectra of modulation-doped AlGaAs/InGaAs/GaAs quantum wells

Bulletin of materials science

T Srinivasan¹  K S R K Rao²  K Gopalakrishna Naik³  R Muralidharan¹ 

[1] Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, India$$Solid State Physics Laboratory, Lucknow Road, Delhi 110 054, IndiaSolid State Physics Laboratory, Lucknow Road, Delhi 110 054, India$$;Department of Physics, Indian Institute of Science, Bangalore 560 012, India$$Department of Physics, Indian Institute of Science, Bangalore 560 012, IndiaDepartment of Physics, Indian Institute of Science, Bangalore 560 012, India$$;Department of Physics, Mangalore University, Mangalagangotri 574 199, India$$Department of Physics, Mangalore University, Mangalagangotri 574 199, IndiaDepartment of Physics, Mangalore University, Mangalagangotri 574 199, India$$

关键词: Photoluminescence;    Fermi edge singularity;    modulation doping.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The photoluminescence study of Fermi-edge singularity (FES) in modulation-doped pseudomorphic Al_ð‘�?Ga_{1â€�?�ð�?��?}As/In_ð‘�?Ga_{1â€�?�ð�?��?}As/GaAs quantum well (QW) heterostructures is presented. In the above QW structures the optical transitions between ð‘�?? = 1 and ð‘�?? = 2 electronic subband to the ð‘�?? = 1 heavy hole subband (𝐸₁₁ and 𝐸₂₁ transitions, respectively) are observed with FES appearing as a lower energy shoulder to the 𝐸₂₁ transition. The observed FES is attributed to the Fermi wave vector in the first electronic subband under the conditions of population of the second electronic subband. The FES appears at about 10 meV below 𝐸₂₁ transition around 4.2 K. Initially it gets stronger with increasing temperature and becomes a distinct peak at about 20 K. Further increase in temperature quenches FES and reaches the base line at around 40 K.

【 授权许可】

Unknown