Electrocaloric effect of PMN�?�PT thin films near morphotropic phase boundary

Bulletin of materials science

S B Krupanidhi¹  Ayan Roy Chaudhuri¹  Jayanta Parui¹  D Saranya¹ 

[1] Materials Research Centre, Indian Institute of Science, Bangalore 560 012, India$$Materials Research Centre, Indian Institute of Science, Bangalore 560 012, IndiaMaterials Research Centre, Indian Institute of Science, Bangalore 560 012, India$$

关键词: PMNâ€�?�PT;    electrocaloric effect;    morphotropic phase boundary;    PLD.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The electrocaloric effect is calculated for PMN�?�PT relaxor ferroelectric thin film near morphotropic phase boundary composition. Thin film of thickness, ∼ 240 nm, has been deposited using pulsed laser deposition technique on a highly (111) oriented platinized silicon substrate at 700°C and at 100 mtorr oxygen partial pressure. Prior to the deposition of PMN�?�PT, a template layer of LSCO of thickness, ∼ 60 nm, is deposited on the platinized silicon substrate to hinder the pyrochlore phase formation. The temperature dependent P�?�E loops were measured at 200 Hz triangular wave operating at the virtual ground mode. Maximum reversible adiabatic temperature change, �? �?? = 31 K, was calculated at 140°C for an external applied voltage of 18 V.

【 授权许可】

Unknown