Wavelength dependent laser-induced etching of Cr�?�O doped GaAs: Morphology studies by SEM and AFM

Bulletin of materials science

A K Shukla¹  T Islam⁴  S S Islam³  H S Mavi¹  Harsh²  Vinita Kumari³  B Joshi³ 

[1] Department of Physics, Indian Institute of Technology, New Delhi 110 016, India$$Department of Physics, Indian Institute of Technology, New Delhi 110 016, IndiaDepartment of Physics, Indian Institute of Technology, New Delhi 110 016, India$$;Solid State Physics Laboratory (DRDO), Lucknow Road, Delhi 110 054, India$$Solid State Physics Laboratory (DRDO), Lucknow Road, Delhi 110 054, IndiaSolid State Physics Laboratory (DRDO), Lucknow Road, Delhi 110 054, India$$;Department of Applied Sciences and Humanities, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi 110 025, India$$Department of Applied Sciences and Humanities, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi 110 025, IndiaDepartment of Applied Sciences and Humanities, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi 110 025, India$$;Department of Electrical Engineering, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi 110 025, India$$Department of Electrical Engineering, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi 110 025, IndiaDepartment of Electrical Engineering, Faculty of Engineering and Technology, Jamia Millia Islamia (Central University), New Delhi 110 025, India$$

关键词: Laser-induced etching;    intermediate state;    nanostructure;    SEM;    AFM.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The laser induced etching of semi-insulating GaAs $langle$100$angle$ is carried out to create porous structure under super- and sub-bandgap photon illumination (ℎ�?). The etching mechanism is different for these separate illuminations where defect states play the key role in making distinction between these two processes. Separate models are proposed for both the cases to explain the etching efficiency. It is observed that under sub-bandgap photon illumination the etching process starts vigorously through the mediation of intermediate defect states. The defect states initiate the pits formation and subsequently pore propagation occurs due to asymmetric electric field in the pore. Formation of GaAs nanostructures is observed using scanning electron (SEM) and atomic force microscopy (AFM).

【 授权许可】

Unknown