| Bulletin of materials science | |
| Structural, optical and electrical properties of chemically deposited copper selenide films | |
| V Ganesan1  L A Patil2  R H Bari2  S Potadar1  | |
| [1] Inter University Consortium for DAE Facilities, Indore 452 001, India$$Inter University Consortium for DAE Facilities, Indore 452 001, IndiaInter University Consortium for DAE Facilities, Indore 452 001, India$$;P.G. Department of Physics, Pratap College, Amalner 425 401, India$$P.G. Department of Physics, Pratap College, Amalner 425 401, IndiaP.G. Department of Physics, Pratap College, Amalner 425 401, India$$ | |
| 关键词: Copper selenide; thin films; chemical bath deposition.; | |
| DOI : | |
| 学科分类:材料工程 | |
| 来源: Indian Academy of Sciences | |
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【 摘 要 】
Stoichiometric and nonstoichiometric thin films of copper selenide have been prepared by chemical bath deposition technique at temperature below 60°C on glass substrate. The effect of nonstoichiometry on the optical, electrical and structural properties of the film was studied. The bandgap energy was observed to increase with the increase in at % of copper in composition. The grain size was also observed to increase with the decrease of at % of copper in composition. The films were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray analysis (EDS), absorption spectroscopy, and AFM. The results are discussed and interpreted.
【 授权许可】
Unknown
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO201912010229068ZK.pdf | 817KB |
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