Bulletin of materials science | |
Raman spectroscopy of graphene on different substrates and influence of defects | |
Biswanath Chakraborty1  Anindya Das1  A K Sood1  | |
[1] Department of Physics, Indian Institute of Science, Bangalore 560 012, India$$Department of Physics, Indian Institute of Science, Bangalore 560 012, IndiaDepartment of Physics, Indian Institute of Science, Bangalore 560 012, India$$ | |
关键词: Graphene; Raman spectroscopy; nano-carbon; phonons.; | |
DOI : | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
We show the evolution of Raman spectra with a number of graphene layers on different substrates, SiO2/Si and conducting indium tin oxide (ITO) plate. The ðº mode peak position and the intensity ratio of ðº and 2ð· bands depend on the preparation of sample for the same number of graphene layers. The 2ð· Raman band has characteristic line shapes in single and bilayer graphene, capturing the differences in their electronic structure. The defects have a significant influence on the ðº band peak position for the single layer graphene: the frequency shows a blue shift up to 12 cm-1 depending on the intensity of the ð· Raman band, which is a marker of the defect density. Most surprisingly, Raman spectra of graphene on the conducting ITO plates show a lowering of the ðº mode frequency by ∼ 6 cm-1 and the 2ð· band frequency by ∼ 20 cm-1. This red-shift of the ðº and 2ð· bands is observed for the first time in single layer graphene.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201912010228988ZK.pdf | 717KB | download |