Ethanol gas sensing properties of Al2O3-doped ZnO thick film resistors

Bulletin of materials science

L A Patil¹  D P Amalnerkar²  D R Patil¹ 

[1] Materials Research Lab, Pratap College, Amalner 425 401, India$$Materials Research Lab, Pratap College, Amalner 425 401, IndiaMaterials Research Lab, Pratap College, Amalner 425 401, India$$;Centre for Materials for Electronics Technology, Pune 411 008, India$$Centre for Materials for Electronics Technology, Pune 411 008, IndiaCentre for Materials for Electronics Technology, Pune 411 008, India$$

关键词: Al2O3 doped ZnO;    ethanol gas sensor;    thick film;    gas response.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al₂O₃ (1 wt%) doped ZnO were observed to be highly sensitive to ethanol vapours at 300°C. Aluminium oxide grains dispersed around ZnO grains would result into the barrier height among the grains. Upon exposure of ethanol vapours, the barrier height would decrease greatly leading to drastic increase in conductance. It is reported that the surface misfits, calcination temperature and operating temperature can affect the microstructure and gas sensing performance of the sensor. The efforts are, therefore, made to create surface misfits by doping Al₂O₃ into zinc oxide and to study the sensing performance. The quick response and fast recovery are the main features of this sensor. The effects of microstructure and additive concentration on the gas response, selectivity, response time and recovery time of the sensor in the presence of ethanol vapours were studied and discussed.

【 授权许可】

Unknown