Study of annealing effects in Al�?�Sb bilayer thin films

Bulletin of materials science

R K Mangal¹  Y K Vijay²  M Singh²  B Tripathi² 

[1] Jaipur Engineering College and Research Centre, Jaipur 303 905, India$$Jaipur Engineering College and Research Centre, Jaipur 303 905, IndiaJaipur Engineering College and Research Centre, Jaipur 303 905, India$$;Department of Physics, University of Rajasthan, Jaipur 302 004, India$$Department of Physics, University of Rajasthan, Jaipur 302 004, IndiaDepartment of Physics, University of Rajasthan, Jaipur 302 004, India$$

关键词: AlSb;    thin film;    RBS;    optical band gap.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

In this paper, we present preparation and characterization of Al�?�Sb bilayer thin films. Thin films of thicknesses, 3000/1000 �? and 3000/1500 �?, were obtained by the thermal evaporation (resistive heating) method. Vacuum annealing and rapid thermal annealing methods were used to mix bilayer thin film structure. Results obtained from optical band gap data and Rutherford back scattering spectrometry showed mixing of Al�?�Sb bilayer system.

【 授权许可】

Unknown