X-ray reflectivity investigation of interlayer at interfaces of multilayer structures: application to Mo/Si multilayers

Bulletin of materials science

G S Lodha¹  R V Nandedkar¹  M Nayak¹ 

[1] Synchrotron Utilization Division, Centre for Advanced Technology, Indore 452 013, India$$Synchrotron Utilization Division, Centre for Advanced Technology, Indore 452 013, IndiaSynchrotron Utilization Division, Centre for Advanced Technology, Indore 452 013, India$$

关键词: X-ray reflectivity;    surfaces and interfaces;    X-ray multilayer;    X-ray photoelectron spectroscopy.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

We report the effect of interlayer on multilayer X-ray reflectivity (XRR) profile using simulations at 8.047 keV (CuK_�?) energy. We distinguished the effect of interfacial roughness and in-depth interlayer on reflectivity profile. The interfacial roughness reduces the intensity of individual peak while the in-depth interlayer redistributed the reflectivity profile. We are able to discern the asymmetry in interlayer thickness at two interfaces if the interfacial roughness is small compared to in-depth interlayer thickness. The limitation is that, the sensitivity decreases with increasing interfacial roughness. This interlayer model is applied for electron beam evaporated Mo/Si multilayers. The Mo�?�on�?�Si interlayer thickness is 10 ± 0.5 �? and Si�?�on�?�Mo interlayer thickness is 8 ± 0.5 �?. The nature of interfacial compound is identified using X-ray photoelectron spectroscopy (XPS). The mechanism of interlayer asymmetry is explained on the basis of different heats of sublimation of Mo and Si.

【 授权许可】

Unknown