Influence of bismuth on properties and microstructures of Sr0.5Ba0.5â€�?�ð�?�¥Bið‘�? TiO3 thin films

Bulletin of materials science

Wang Yin¹  Tao Wenhong²  Wei Qihong²  Fu Xinghua² 

[1] Department of Foreign Languages, Jinan University, Jinan 250022, PR China$$Department of Foreign Languages, Jinan University, Jinan 250022, PR ChinaDepartment of Foreign Languages, Jinan University, Jinan 250022, PR China$$;Department of Materials Science and Engineering, Jinan University, Jinan 250022, PR China$$Department of Materials Science and Engineering, Jinan University, Jinan 250022, PR ChinaDepartment of Materials Science and Engineering, Jinan University, Jinan 250022, PR China$$

关键词: BST thin films;    dielectric constant;    dielectric loss;    Bi dopant;    characteristic microstructure.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The influence of bismuth (Bi) on the dielectric and ferroelectric properties of Sr_0.5Ba_{0.5â€�?�ð�?��?}Bi_ð‘�? TiO₃ (BST, 0 < ð‘�?< 0.030 mol) thin films was studied. The results showed that the dielectric constant (ðœ�?_r) and dielectric loss (tan ð›�?) decreased, and temperature, ð‘�??_m, for maximum and ðœ�?_r (Curie temperature), moved to lower temperature with increasing Bi content. The ð‘�?_r, ð‘�?_s and 𝐸_c were 0.22 𝜇C/cm², 0.32 𝜇C/cm² and 60 kV/cm, respectively for Sr_0.5Ba_0.485Bi_0.015TiO₃ thin films measured at 100 Hz, 20 V. The microstructure of BST thin films was studied by XRD and TEM. Tetragonal perovskite grains existed in BST thin films, but the grain size decreased with increasing doping ratio in BST. The characteristic absorption band for octahedron [TiO₂] (471.65 cm^-1) was shifted to lower wave number.

【 授权许可】

Unknown