Optical, structural and electrical properties of Mn doped tin oxide thin films

Bulletin of materials science

Rajeeb Brahma¹  M Ghanashyam Krishna¹  A K Bhatnagar² 

[1] School of Physics, University of Hyderabad, Hyderabad 500 046, India$$School of Physics, University of Hyderabad, Hyderabad 500 046, IndiaSchool of Physics, University of Hyderabad, Hyderabad 500 046, India$$;School of Physics, University of Hyderabad, Hyderabad 500 046, India$$Pondicherry University, Pondicherry Central University PO, Pondicherry 605 014, India$$School of Physics, University of Hyderabad, Hyderabad 500 046, IndiaSchool of Physics, University of Hyderabad, Hyderabad 500 046, India$$Pondicherry University, Pondicherry Central University PO, Pondicherry 605 014, India$$Pondicherry University, Pondicherry Central University PO, Pondicherry 605 014, IndiaSchool of Physics, University of Hyderabad, Hyderabad 500 046, India$$Pondicherry University, Pondicherry Central University PO, Pondicherry 605 014, India$$

关键词: Tin oxide;    transparent conductors;    thin films.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Mn doped SnO_ð‘�? thin films have been fabricated by extended annealing of Mn/SnO₂ bilayers at 200°C in air for 110 h. The dopant concentration was varied by controlling the thickness of the metal layer. The overall thickness of the film was 115 nm with dopant concentration between 0 and 30 wt% of Mn. The films exhibit nanocrystalline size (10â€�??20 nm) and presence of both SnO and SnO₂. The highest transmission observed in the films was 75% and the band gap varied between 2.7 and 3.4 eV. Significantly, it was observed that at a dopant concentration of ∼ 4 wt% the transmission in the films reached a minimum accompanied by a decrease in the optical band gap. At the same value of dopant concentration the resistivity also reached a peak. This behaviour appears to be a consequence of valence fluctuation in Sn between the 2+ and 4+ states. The transparent conductivity behaviour fits into a model that attributes it to the presence of Sn interstitials rather than oxygen vacancies alone in the presence of Sn²⁺.

【 授权许可】

Unknown