Structural and electrical measurements of CdZnSe composite

Bulletin of materials science

T P Sharma¹  N S Saxena¹  Vibhav K Saraswat¹  V Kishore¹ 

[1] Semiconductor and Polymer Science Laboratory, University of Rajasthan, Jaipur 302 004, India$$Semiconductor and Polymer Science Laboratory, University of Rajasthan, Jaipur 302 004, IndiaSemiconductor and Polymer Science Laboratory, University of Rajasthan, Jaipur 302 004, India$$

关键词: Resistivity;    activation energy;    polycrystalline;    X-ray diffraction.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The 𝐼â€�?�ð�?��?? characterization and the electrical resistivity of selenium rich Se₈₅Cd_{15â€�?�ð�?��?}Zn_ð‘�? (ð‘�? = 0, 3, 7, 11 and 15) system at room temperature have been studied. Samples were obtained using melt cooling technique. So prepared samples were then characterized in terms of their crystal structure and lattice parameter using X-ray diffraction method. The materials were found to be polycrystalline in nature, having zinc blend structure over the whole range of zinc concentration. The measurements of 𝐼â€�?�ð�?��?? characteristics have been carried out at different temperatures from room to 140°C. The electrical resistivity of the samples with composition at room temperature has been found to vary between maximum 2.7 Ã�? 10⁸ð›�? m and minimum 7.3 Ã�? 10⁵ð›�? m and shows a maximum at 3 at. wt.% of Zn. The carrier activation energy of the samples with composition has also been determined and found to vary from 0.026 eV to 0.111 eV.

【 授权许可】

Unknown