期刊论文详细信息
Bulletin of materials science | |
High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method | |
Rajiv Vaidya1  S G Patel1  Madhavi Dave1  A R Jani1  | |
[1] Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India$$Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, IndiaDepartment of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India$$ | |
关键词: Single crystals; chemical vapour transport technique; high pressure.; | |
DOI : | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
Single crystals of MoS2 and MoSe2 were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS2 and MoSe2 do not undergo any structural transitions under pressure.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201912010228512ZK.pdf | 259KB | download |