High pressure effect on MoS2 and MoSe2 single crystals grown by CVT method

Bulletin of materials science

Rajiv Vaidya¹  S G Patel¹  Madhavi Dave¹  A R Jani¹ 

[1] Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India$$Department of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, IndiaDepartment of Physics, Sardar Patel University, Vallabh Vidyanagar 388 120, India$$

关键词: Single crystals;    chemical vapour transport technique;    high pressure.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Single crystals of MoS₂ and MoSe₂ were grown by chemical vapour transport method using iodine as a transporting agent and characterized by optical microscopy, energy dispersive analysis (EDAX), X-ray powder diffraction (XRD) and Hall mobility at room temperature. The variation of electrical resistance under pressure was monitored in a Bridgman anvil set-up up to 6.5 GPa to identify occurrence of any structural transition. MoS₂ and MoSe₂ do not undergo any structural transitions under pressure.

【 授权许可】

Unknown