| Bulletin of materials science | |
| Kinetics of Ge20Se80â€�?�ð�?�¥Asð‘�? (ð‘�? = 0, 5, 10, 15 and 20) in glass transition region | |
| N S Saxena1  Kedar Singh1  | |
| [1] Department of Physics, University of Rajasthan, Jaipur 302 004, India$$Department of Physics, University of Rajasthan, Jaipur 302 004, IndiaDepartment of Physics, University of Rajasthan, Jaipur 302 004, India$$ | |
| 关键词: Glass transition temperature; activation energy; heat absorbed; composition dependence.; | |
| DOI : | |
| 学科分类:材料工程 | |
| 来源: Indian Academy of Sciences | |
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【 摘 要 】
The results of differential scanning calorimetric (DSC) measurements on Ge20Se80â€�?�ð�?��?Asð‘�? (ð‘�? = 0, 5, 10, 15 and 20) system with the specific aim of investigating the effect of heating rate and composition on glass transition temperature have been discussed. The results indicate that the glass transition temperature (ð‘�??ð‘�??) is dependent both on the heating rate and composition. The glass transition activation energy (ð¸ð‘�?) and heat absorbed in glass transition region (ð›¥ð�?) are higher for Ge20Se65As15 as compared to the values of other compositions of arsenic. An effort has also been made to develop an empirical model for the composition dependence of ð›¥ð�?. A good agreement has been observed between the experimental values and the results of model calculation.
【 授权许可】
Unknown
【 预 览 】
| Files | Size | Format | View |
|---|---|---|---|
| RO201912010228456ZK.pdf | 204KB |
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