Electrical properties of Ta2O5 films deposited on ZnO

Bulletin of materials science

S K Nandi¹  Shivprasad Patil³  S Varma³  G K Dalapati¹  P K Bose²  S K Samanta¹  S Chatterjee¹  C K Maiti¹ 

[1] Department of Electronics and ECE, Indian Institute of Technology, Kharagpur 721 302, India$$Department of Electronics and ECE, Indian Institute of Technology, Kharagpur 721 302, IndiaDepartment of Electronics and ECE, Indian Institute of Technology, Kharagpur 721 302, India$$;Department of Mechanical Engineering, Jadavpur University, Kolkata 700 032, India$$Department of Mechanical Engineering, Jadavpur University, Kolkata 700 032, IndiaDepartment of Mechanical Engineering, Jadavpur University, Kolkata 700 032, India$$;Institute of Physics, Bhubaneswar 751 005, India$$Institute of Physics, Bhubaneswar 751 005, IndiaInstitute of Physics, Bhubaneswar 751 005, India$$

关键词: ZnO;    Ta2O5;    rf magnetron sputtering;    microwave plasma;    PECVD;    high-ð‘�?.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

High dielectric constant (high-ð‘�?) Ta₂O₅ films have been deposited on ZnO/ð‘�?-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/ð‘�?-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta₂O₅/ZnO/ð‘�?-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitanceâ€�?�voltage (𝐶â€�?�ð�?��??), conductanceâ€�?�voltage (𝐺â€�?�ð�?��??) and currentâ€�?�voltage (𝐼â€�?�ð�?��??) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowlerâ€�?�Nordheim (𝐹â€�?�ð�?��?) constant current stressing.

【 授权许可】

Unknown