Bulletin of materials science | |
Electrical properties of Ta2O5 films deposited on ZnO | |
S K Nandi1  Shivprasad Patil3  S Varma3  G K Dalapati1  P K Bose2  S K Samanta1  S Chatterjee1  C K Maiti1  | |
[1] Department of Electronics and ECE, Indian Institute of Technology, Kharagpur 721 302, India$$Department of Electronics and ECE, Indian Institute of Technology, Kharagpur 721 302, IndiaDepartment of Electronics and ECE, Indian Institute of Technology, Kharagpur 721 302, India$$;Department of Mechanical Engineering, Jadavpur University, Kolkata 700 032, India$$Department of Mechanical Engineering, Jadavpur University, Kolkata 700 032, IndiaDepartment of Mechanical Engineering, Jadavpur University, Kolkata 700 032, India$$;Institute of Physics, Bhubaneswar 751 005, India$$Institute of Physics, Bhubaneswar 751 005, IndiaInstitute of Physics, Bhubaneswar 751 005, India$$ | |
关键词: ZnO; Ta2O5; rf magnetron sputtering; microwave plasma; PECVD; high-ð‘�?.; | |
DOI : | |
学科分类:材料工程 | |
来源: Indian Academy of Sciences | |
【 摘 要 】
High dielectric constant (high-ð‘�?) Ta2O5 films have been deposited on ZnO/ð‘�?-Si substrate by microwave plasma at 150°C. Structure and composition of the ZnO/ð‘�?-Si films have been investigated by X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and X-ray photoelectron spectroscopy (XPS) for chemical composition. The electrical properties of the Ta2O5/ZnO/ð‘�?-Si metal insulator semiconductor (MIS) structures were studied using high frequency capacitanceâ€�?�voltage (ð¶â€�?�ð�?��??), conductanceâ€�?�voltage (ðºâ€�?�ð�?��??) and currentâ€�?�voltage (ð¼â€�?�ð�?��??) characteristics. Charged trapping properties have been studied by measuring the gate voltage shift due to trapped charge generation under Fowlerâ€�?�Nordheim (ð¹â€�?�ð�?��?) constant current stressing.
【 授权许可】
Unknown
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