Photoelectronic properties of HgI2 crystals for nuclear radiation detection

Bulletin of materials science

H N Acharya¹  S L Sharma¹ 

[1] Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India$$Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, IndiaDepartment of Physics and Meteorology, Indian Institute of Technology, Kharagpur 721 302, India$$

关键词: Mercuric idodide;    photoconductivity;    semiconductor detector;    nuclear radiation detector.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Photoelectronic properties of red mercuric iodide single crystals, grown from its saturated solution in tetrahydrofuran, have been studied for the wavelength range 450-700 nm at temperatures 80, 110, 175, 235 and 300 K. Various aspects of the optical generation of charge carriers have been discussed. The computer simulation of the room temperature photoconductivity has generated the optimized values of the mobility-lifetime products (ðœ�?_e𝜏_e = 5.67 Ã�? 10^-5 cm²/V, ðœ�?_h𝜏_h = 0.18 Ã�? 10^-5 cm²/V), and surface recombination velocities (ð‘�??_e = 3.2 Ã�? 10⁵ cm/s, ð‘�??_h = 4.5 Ã�? 10⁵ cm/s) of the charge carriers in these crystals. The estimated values of the electron and hole drift lengths for typical electric fields suggest that, under the negative electrode illumination, THF ð›�?-HgI₂ crystals have high potential as regards to their use as phptodetectors in most of the scintillation spectrometers.

【 授权许可】

Unknown