Growth and characterization of indium antimonide and gallium antimonide crystals

Bulletin of materials science

H L Bhat¹  N K Udayashankar² 

[1] Department of Physics, Indian Institute of Science, Bangalore 560 012, India$$Department of Physics, Indian Institute of Science, Bangalore 560 012, IndiaDepartment of Physics, Indian Institute of Science, Bangalore 560 012, India$$;Department of Physics, Karnataka Regional Engineering College, Surathkal, Srinivasnagar 574 157, India$$Department of Physics, Karnataka Regional Engineering College, Surathkal, Srinivasnagar 574 157, IndiaDepartment of Physics, Karnataka Regional Engineering College, Surathkal, Srinivasnagar 574 157, India$$

关键词: Synthesis;    crystallization;    chemical etching;    defect density;    Hall measurements;    photoluminescence (PL) spectra.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

Indium antimonide and gallium antimonide were synthesized from the respective component elements using an indigenously fabricated synthesis unit. Bulk crystals of indium antimonide and gallium antimonide were grown using both the vertical and horizontal Bridgman techniques. Effect of ampoule shapes and diameters on the crystallinity and homogeneity was studied. The grown crystals were characterized using X-ray analysis, EDAX, chemical etching, Hall effect and conductivity measurements. In the case of gallium antimonide, effect of dopants (Te and In) on transport and photoluminescence properties was investigated.

【 授权许可】

Unknown