Influence of crystal�?�melt interface shape on self-seeding and single crystalline quality

Bulletin of materials science

B M Arora³  K B Lal¹  D B Gadkari²  P Shashidharan¹ 

[1] Department of Physics, University of Mumbai, Mumbai 400 098, India$$Department of Physics, University of Mumbai, Mumbai 400 098, IndiaDepartment of Physics, University of Mumbai, Mumbai 400 098, India$$;Department of Physics, Mithibai College, Mumbai 400 056, India$$Department of Physics, Mithibai College, Mumbai 400 056, IndiaDepartment of Physics, Mithibai College, Mumbai 400 056, India$$;CMPS & MS, Tata Institute of Fundamental Research, Mumbai 400 005, India$$CMPS & MS, Tata Institute of Fundamental Research, Mumbai 400 005, IndiaCMPS & MS, Tata Institute of Fundamental Research, Mumbai 400 005, India$$

关键词: Self-seeding;    orientation;    interface shape;    antimonide crystals;    VDS technique.;   

DOI  :  

学科分类：材料工程

来源: Indian Academy of Sciences

【 摘 要 】

The growth of Sb-based crystals (InSb, GaSb etc) was undertaken using resistive heater furnace by vertical directional solidification (VDS) technique. Crystal�?�melt interface shape during the growth was shown to convert from concave to convex along the crystal axis of the ingots. Many antimonide (Sb) crystals of 8 mm to 18 mm diameter were grown by optimized growth parameters. The forced convection and absence of conducting support to ampoule showed improvement in crystal quality of as grown ingots. Crystals showed preferred orientation and self-seeding. Results on interface shape and crystallinity of ingots were found to be in good agreement with the experiments.

【 授权许可】

Unknown