Growth of Silicon- Germanium Alloy Layers

Defence Science Journal

R. Kesavan¹  S. Maikap²  L. K. Bera²  S. K. Ray²  C. K. Maiti²  N. B. Chakrabarti²  V. Kumar¹ 

[1] Solid State Physics Laboratory, Delhi;Indian Institute of Technology Kharagpur, Kharagpur

关键词: Heteroepitaxy techniques;    Binary alloys;    Gas source molecular beam epitaxy;    Heteroepitaxial film deposition;    SiGe buffer layers;    Hydrogenated amorphous SiGe;   

DOI  :  

学科分类：社会科学、人文和艺术（综合）

来源: Defence Scientific Information & Documentation Centre

【 摘 要 】

Heteroepitaxy techniques for the growth of group IV binary alloys, in particular, SiGe, SiC, GeC and SiSn films are reviewed. Deposition of heteroepitaxial films using various reactors like molecular beam epitaxy, gas source molecular beam epitaxy, and different chemical vapour deposition techniques are compared. Issues related to heteroepitaxial film deposition, such as critical layer thickness are examined. Growth of strained silicon on relaxed SiGe buffer layers, poly-SiGe film and hydrogenated amorphous SiGe (a-SiGe:H) film is also reviewed

【 授权许可】

Unknown