Characterisation of Ion Implantation-induced Defects in Certain Technologically Important Materials by Positron Annihilation (Review Paper)

Defence Science Journal

P.M.G. Nambissan¹ 

[1] Saha Institute of Nuclear Physics, Kolkata

关键词: Materials defects;    ion implantation;    induced defects;    strategic materials;    special materials;    material characterisation;    positron annihilation;    electron-positron annihilation;    defect analysis;   

DOI  :  

学科分类：社会科学、人文和艺术（综合）

来源: Defence Scientific Information & Documentation Centre

【 摘 要 】

The application of positron annihilation spectroscopy for the studies of defects produced by different types of charged particles and ions in a variety of materials is discussed with specific examples. The ability to detect and quantify the information through the characteristic parameters of the annihilation radiation in a totally non-destructive method has made the fundamental process of electron-positron annihilation a powerful spectroscopic probe for investigating the structure and properties of materials. Ion implantation produces defects in the structure of solids and the latter can be recovered from the defects by annealing at high temperatures. Here the annealing is done in sequential steps so that the different stages of evolution of defects and their interaction with impurity atoms can be studied systematically. Defects produced by irradiation by particles like protons, alpha, boron and neon ions in materials ranging from simple metals to binary alloys are discussed. A detailed evaluation of the positron lifetimes in terms of the popular positron trapping models is also presented. Further as a special case, the method of extraction of values of several useful physical parameters of inert gas bubbles inside a metal matrix is explained with the help of a model analysis. Defence Science Journal, 2009, 59(4), pp.329-341, DOI:http://dx.doi.org/10.14429/dsj.59.1531

【 授权许可】

Unknown