期刊论文详细信息
Defence Science Journal | |
Dependence of Physical Parameters of Compound Semiconductors on Refractive Index | |
T.V.R. Rao1  R.R. Reddy1  Y. Nazeer Aharnmed1  P. Abdul Azeem1  K. Rama Gopal1  B. Sasikala Devi1  | |
[1] Sri Krishnadevaraya University, Anantapur | |
关键词: Refractive index; plasmon energy; electronic polarisability; bond length; microhardness; bulk modulus; force constants; and lattice energy; | |
DOI : | |
学科分类:社会科学、人文和艺术(综合) | |
来源: Defence Scientific Information & Documentation Centre | |
【 摘 要 】
Interesting relationships have been found between refractive index, plasmon energy, electronic polarisability, bond length, microhardness, bulk modulus, force constants and lattice energy. An attempt has been made for the first time to correlate only one physical parameter with others. The calculated values are in good agreement with the experimental values as well as with the values reported in the literature. Refractive index data is the only one parameter required to estimate all the above parameters.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201912010139569ZK.pdf | 393KB | download |