Chemical flip-chip bonding method for fabricating 10-µm-pad-pitch interconnect

IEICE Electronics Express

Yasuhiro Yamaji¹  Hiroshi Nakagawa¹  Masahiro Aoyagi¹  Katsuya Kikuchi¹  Tokihiko Yokoshima¹ 

[1] High Density Interconnection Group, Nanoelectronics Research Institute (NeRI) National Institute of Advanced Industrial Science and Technology (AIST)

关键词: interconnect;    flip chip;    electroless plating;    Ni-B;    fine pitch;   

DOI  :  10.1587/elex.5.732

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(12)Cited-By(2)A flip-chip bonding method has been developed for fabricating ultrafine-pitch pad-to-pad interconnects. The method utilizes the preferential growth of Ni-B bridge layers on resin walls in a microscale cavity structure fabricated in the underfill resin between copper pads facing each other under some conditions of electroless Ni-B plating. In this method, the interconnect can be fabricated without loading and/or heating. By controlling the growth of the bridge layer on the resin walls in the microscale cavity under optimized plating conditions, the feasibility of ultrafine-pitch flip-chip bonding with a 10-µm pad pitch is experimentally demonstrated at a temperature of 60°C.

【 授权许可】

Unknown