High receiver responsivity and low dark current of InP-based pin-photodiode array monolithically integrated with 90° hybrid and spot-size converter using selective embedding regrowth

IEICE Electronics Express

Hajime Shoji¹  Hideki Yagi¹  Yoshihiro Yoneda¹  Ryuji Masuyama¹  Takehiko Kikuchi¹  Yoshihiro Tateiwa¹  Masaru Takechi¹  Naoko Inoue¹  Katsumi Uesaka¹  Tomokazu Katsuyama¹ 

[1] Transmission Devices R & D Laboratories, Sumitomo Electric Industries, LTD.

关键词: coherent transmission;    90° hybrid;    multimode interference structure;    pin-photodiode;    butt-joint regrowth;    selective embedding regrowth;   

DOI  :  10.1587/elex.11.20141018

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(15)The InP-based pin-photodiode array monolithically integrated with a 90° hybrid and spot-size converters was realized using selective embedding regrowth for compact 100 Gb/s coherent receivers. The low dark current of less than 500 pA up to 85 °C was attained by InP passivation effect in four-channel pin-photodiodes. As a receiver using these photodiode arrays, a receiver responsivity including total loss of 6.7 dB in the 90° hybrid and intrinsic loss of 3 dB in the polarization beam splitter was higher than 0.060 A/W between �?5 °C and 85 °C through the integration of the spot-size converter. Responsivity imbalance of the In-phase and Quadrature channels was also less than 0.5 dB over the C-band.

【 授权许可】

Unknown