IEICE Electronics Express | |
AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance | |
Renyuan Jiang1  Yu Zou1  Mengdi Fu1  ZuoChen Shi1  Haiqing Jiang1  Xiangdong Li1  Weihang Zhang1  Zhenxing Guo1  Jincheng Zhang1  Yue Hao1  | |
[1] Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University | |
关键词: GaN HEMTs; AlGaN channel; breakdown; high temperature; | |
DOI : 10.1587/elex.12.20150694 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(20)We report on AlGaN channel metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for the first time. The insulator of 10-nm SiNx was deposited by plasma enhanced chemical vapor deposition, which induced a low reverse and forward Schottky leakage. A very high breakdown electric field of 1.8 MV/cm was reached with a gate-drain distance of 2 µm. The breakdown voltage increased non-linearly with the gate-drain distance and reached 1661 V with a gate-drain distance of 20 µm. As temperature increases from 25 to 275°C, the saturation drain current decreases slightly by 20% from 211 to 169 mA/mm and the on-resistance increases only by 24%.
【 授权许可】
Unknown
【 预 览 】
Files | Size | Format | View |
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RO201911300836151ZK.pdf | 2823KB | download |