AlGaN channel MIS-HEMTs with a very high breakdown electric field and excellent high-temperature performance

IEICE Electronics Express

Renyuan Jiang¹  Yu Zou¹  Mengdi Fu¹  ZuoChen Shi¹  Haiqing Jiang¹  Xiangdong Li¹  Weihang Zhang¹  Zhenxing Guo¹  Jincheng Zhang¹  Yue Hao¹ 

[1] Key Lab of Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

关键词: GaN HEMTs;    AlGaN channel;    breakdown;    high temperature;   

DOI  :  10.1587/elex.12.20150694

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(20)We report on AlGaN channel metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) for the first time. The insulator of 10-nm SiNx was deposited by plasma enhanced chemical vapor deposition, which induced a low reverse and forward Schottky leakage. A very high breakdown electric field of 1.8 MV/cm was reached with a gate-drain distance of 2 µm. The breakdown voltage increased non-linearly with the gate-drain distance and reached 1661 V with a gate-drain distance of 20 µm. As temperature increases from 25 to 275°C, the saturation drain current decreases slightly by 20% from 211 to 169 mA/mm and the on-resistance increases only by 24%.

【 授权许可】

Unknown