A novel small-signal modeling and simulation technique in SiGe: C HBT for ultra high frequency applications

IEICE Electronics Express

Gh. R. Karimi¹  R. Banitalebi¹ 

[1] Electrical Engineering Department of Razi University

关键词: small-signal;    equivalent circuit model;    SiGe:C;    heterojunction bipolar transistor;    ANN;   

DOI  :  10.1587/elex.8.299

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)In this paper the small-signal equivalent circuit model of SiGe:C heterojunction bipolar transistors (HBTs) has directly been extracted from S-parameter data. Circuit simulations by the use of neural network architecture and a standard IHP 0.13um BiCMOS technology confirmed our design goals. To check the capability of the direct approach, scattering parameters were generated and compared with Artificial Neural Network (ANN). Then measured and model-calculated data have represented an excellent agreement with less than 0.166% discrepancy in the frequency range of > 300GHz over a wide range of bias points.

【 授权许可】

Unknown