Dependence of electrical properties of pentacene Thin-Film Transistor on active layer thickness

IEICE Electronics Express

Naoto Matsuo¹  Akira Heya¹ 

[1] Department of Materials Science and Chemistry, University of Hyogo

关键词: pentacene;    OTFT;    injection resistance;    quantum effect;   

DOI  :  10.1587/elex.8.360

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(12)Cited-By(1)The electrical properties of Organic thin-film transistor (OTFT) with a pentacene active layer of 3nm and 50nm were examined. By a new estimation method of applied voltage in channel layer of OTFT, it was found that the ratio of potential drop to lateral direction of channel at on-state is smaller than that at off-state and also that of 3nm thickness OTFT is larger than 50nm thickness. The on-state current of 3nm thickness OTFT was larger than that of 50nm thickness. The main reason of this phenomenon is due to the difference of the resistance of hole injection from Au to pentacene. The quantum-mechanical effect is also discussed.

【 授权许可】

Unknown