IEICE Electronics Express | |
A 60GHz 3-dB tandem coupler using offset broadside-coupled lines on a silicon substrate | |
Kenichi Okada3  Yusuke Uemichi2  Hiroyuki Ito1  Kazuya Masu1  Hamid Kiumarsi1  Noboru Ishihara1  Yasuto Chiba2  | |
[1] Solutions Research Laboratory, Tokyo Institute of Technology;Electron Device Laboratory, Fujikura Ltd.;Department of Physical Electronics, Tokyo Institute of Technology | |
关键词: 60GHz band; tandem coupler; 3-dB coupler; broadside-coupled lines; quadrature; millimeter-wave passive devices; | |
DOI : 10.1587/elex.10.20120901 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
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【 摘 要 】
References(15)In this letter, a 60GHz tandem coupler using offset broadside-coupled lines is proposed on a silicon-based integrated passive device technology. Over the frequency band of 57-66GHz, the measured insertion loss, amplitude imbalance, input return loss, isolation and phase error of the designed tandem coupler are better than 0.67dB, 0.31dB, 27.9dB, 29.7dB and 3.7° respectively. To the best of our knowledge the proposed coupler achieves the lowest reported insertion loss and amplitude imbalance for a 3-dB coupler on a silicon substrate at 60GHz band. Furthermore using the even- and odd-mode analysis, the reason for a high directivity of edge-coupled lines and a low coupling level of broadside-coupled lines on the adopted technology is investigated and a solution for increasing the coupling level of broadside-coupled lines is proposed.
【 授权许可】
Unknown
【 预 览 】
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RO201911300788243ZK.pdf | 1001KB | ![]() |