Highly-Efficient Advanced Thermoelectric Devices from Different Multilayer Thin Films | Science Publications

American Journal of Engineering and Applied Sciences

Zhigang Xiao¹  Ashley Tramble¹  Barry Johnson¹  Jordan Cole¹  Chauncy Casselberry¹  Mebougna Drabo¹  Satilmis Budak¹ 

关键词: Thermoelectric Materials;    Figure of Merit;    Seebeck Coefficient;    High Energy Ion Beam Bombardment;   

DOI  :  10.3844/ajeassp.2016.356.363

学科分类：工程和技术（综合）

来源: Science Publications

【 摘 要 】

The efficiency of the thermoelectric materials and devices is shown by the dimensionless Figure of merit, ZT. ZT is calculated by multiplying the Seebeck coefficient with square of the electrical conductivity and absolute temperature and dividing it all by the thermal conductivity. Thermoelectric devices were prepared using different multilayered thin film structures in the order of SiO₂/SiO₂ + Ge/Ge/Sb + Ge/Si/Si + Ge/Ge/Ge + Si by DC/RF Magnetron Sputtering. The prepared thermoelectric devices have been tailored with 5 MeV Si ions bombardment at the different fluences (doses) to form quantum structures in the multilayer thin films to improve the efficiency of the thermoelectric devices. Seebeck coefficients, van der Pauw-four probe resistivity, Hall Effect coefficient, density and mobility have been measured. After the samples were prepared, SEM/EDS data were collected. FIB/SEM images were provided to figure out the cross-section of the fabricated devices. Seebeck coefficients and electrical resistivity results were affected positively if the appropriate ion beam dose was selected.

【 授权许可】

Unknown