Properties of Erbium and Ytterbium Doped Gallium Nitride Layers Fabricated by Magnetron Sputtering

Acta Polytechnica

Z. Burian¹  J. Oswald¹  I. Hüttel¹  J. Zavadil¹  J. Hamáček¹  V. Peřina¹  J. Špirková¹  V. Prajzler¹ 

关键词: Gallium nitride;    Erbium;    Ytterbium;    magnetron sputtering;    photoluminescence;   

DOI  :  

来源: Czech Technical University in Prague, Faculty of M

【 摘 要 】

We report about some properties of erbium and erbium/ytterbium doped gallium nitride (GaN) layers fabricated by magnetron sputtering on silicon, quartz and Corning glass substrates. For fabricating GaN layers two types of targets were used - gallium in a stainless steel cup and a Ga 2 O 3target. Deposition was carried out in the Ar+N 2gas mixture. For erbium and ytterbium doping into GaN layers, erbium metallic powder and ytterbium powder or Er 2 O 3and Yb 2 O 3pellets were laid on the top of the target. The samples were characterized by X-ray diffraction (XRD), photoluminescence spectra and nuclear analytical methods. While the use of a metallic gallium target ensured the deposition of well-developed polycrystalline layers, the use of gallium oxide target provided GaN films with poorly developed crystals. Both approaches enabled doping with erbium and ytterbium ions during deposition, and typical emission at 1 530 nm due to the Er 3+intra-4f4 I 13/2→4 I 15/2transition was observed.

【 授权许可】

Unknown