A new active pixel structure with a pinned photodiode for wide dynamic range image sensors

IEICE Electronics Express

Shoji Kawahito²  Jong-Ho Park³  Yasuo Wakamori¹ 

[1] LSI Development Department Semiconductor Division, Yamaha Corp.;Graduate School of Research Institute of Electronics, Shizuoka University;Graduate School of Electronic Science and Technology, Shizuoka University

关键词: CMOS image sensor;    wide dynamic range;    floating gate;   

DOI  :  10.1587/elex.2.482

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)A wide dynamic range CMOS image sensor based on a new active pixel structure with a pinned photodiode is proposed and evaluated with device simulations. The proposed pixel device has a linear and a logarithmic characteristics in low and high illumination region, respectively. The technique of direct detection of photodiode potential leads to a wide logarithmic response compared with the conventional linear-log wide DR image sensor with pinned photo diode.

【 授权许可】

Unknown