Single-Electron Transistor (SET) Process and Device Simulation Using SYSNOPSYS TCAD Tools| Science Publications

American Journal of Applied Sciences

Uda Hashim¹  Amiza Rasmi¹ 

关键词: Process simulation;    device simulation;    synopsys TCAD tools;   

DOI  :  10.3844/ajassp.2006.1933.1938

学科分类：自然科学（综合）

来源: Science Publications

【 摘 要 】

Simulation of semiconductor device fabrication and operation is important to the design and manufacture of integrated circuits because it provides insights into complex phenomena that cannot obtained through experimentation or simple analytic models. Process and device simulation is commonly using for the design of new very large scale integration (VLSI) devices and processes. Simulation programs serves as exploratory tools in order to gain better understanding of process and device physics.In this research, single-electron transistor (SET) is simulated using Synopsys TCAD simulation tools to improve device performance and reliability or to increase the yield. The Taurus Medici is utilized for SET device simulation and the SET process simulation is utilizing Taurus TSUPREM-4. In addition, the structure of SET device, the capacitance, power, resistance and charging energy of SET device were obtained from these simulations. Ultimately, the SET device is operated at room temperature operation (300K).

【 授权许可】

Unknown