A lateral DMOS with partial buried-oxide layer to achieve better RESURF effect

IEICE Electronics Express

Siyang Liu¹  Chaohui Yu¹  Chunwei Zhang¹  Daying Sun¹  Weifeng Sun¹ 

[1] National ASIC System Engineering Research Center, Southeast University

关键词: partial buried-oxide;    RESURF;    inversion layer;    LDMOS;    breakdown voltage;   

DOI  :  10.1587/elex.11.20140055

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(6)A novel lateral double diffused MOSFET (LDMOS) structure with partial buried-oxide layer under the n-drift region, which is suitable for the bulk silicon epitaxial process, is proposed. The introduction of the buried-oxide layer produces an inversion layer at buried-oxide/p-sub interface and achieves better reduced surface field (RESURF) effect comparing with the conventional device with buried-pwell. Moreover, the buried-oxide can prevent the impurity diffusion and improve the doping concentration of the n-drift region. As a result, the proposed structure improves the breakdown voltage about 12% and increases the current capability over 30% at the same time.

【 授权许可】

Unknown