C-band general Class-J power amplifier using GaN HEMT

IEICE Electronics Express

Haodong Lin¹  Shuyi Xie¹  Songbai He¹  Chaoyi Huang¹  Fei You¹  Zhebin Hu¹ 

[1] School of Electronic Engineering, University of Electronic Science and Technology of China

关键词: C-band;    Class-J;    wideband;    power amplifier;    linearity optimization;   

DOI  :  10.1587/elex.13.20160483

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(11)In this paper, a C-band wideband power amplifier (PA) using a GaN HEMT is proposed. The general Class-J mode, which offer a bigger design space for the fundamental and harmonic terminations, is introduced to implement wideband PA. Then, to verify the mechanism mentioned above, a wideband PA operating from 3.5 to 6.0 GHz is proposed and fabricated. Meanwhile, the load/source harmonic and baseband impedances are also considered for the linearity. The amplifier exhibits 8�?11 dB gain and 51%�?64% drain efficiency (DE) covering from 3.5 to 5.5 GHz.

【 授权许可】

Unknown