Phase noise suppression techniques for high frequency synthesizers in 65 nm CMOS

IEICE Electronics Express

Yangyang Zhou¹  Jianjun Zhou¹  Peng Qin¹  Xiaoyong Li¹  Hao Yan¹ 

[1] School of Microelectronics, Shanghai Jiao Tong University

关键词: phase noise suppression;    frequency synthesizer;    X-band;    VCO;    crystal oscillator;   

DOI  :  10.1587/elex.11.20141062

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)This paper describes several phase noise suppression techniques for X-band (8�?12 GHz) frequency synthesizer design in 65 nm CMOS technologies. A low noise voltage generator for varactor DC biasing is proposed to minimize its contribution to VCO phase noise, which minimizes the out-of-band phase noise. A crystal oscillator with low noise biasing is proposed to prevent bias and supply noise from deteriorating its output phase noise, which improves the in-band phase noise. A frequency synthesizer prototype was implemented in 65 nm CMOS technology and generates 8.6�?12.4 GHz output frequencies, with a measured phase noise performance of �?90 dBc/Hz and �?110 dBc/Hz at 10-kHz (in-band) and 1-MHz (out-of-band) frequency offset, respectively. The prototype draws 33 mA current from a 1.2 V power supply and the core circuit area is 0.2 mm2. The performance comparison demonstrates the prototype achieves the best phase noise performance among all published frequency synthesizers in X-band or higher frequencies.

【 授权许可】

Unknown