Adaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide Thickness | Science Publications

Journal of Computer Science

B. Gopi¹  R. S.D. Wahidabanu¹ 

关键词: Multifunctional device;    eighteen months;    device performance;    micro level;    punch through;    output current;    simulation result;    oxide thickness;    external current;   

DOI  :  10.3844/jcssp.2012.515.522

学科分类：计算机科学（综合）

来源: Science Publications

【 摘 要 】

Problem statement: Since the advent of IC and VLSI technology, the demand for high-speed devices and equipment is growing very rapidly. Every individual researcher is marching towards the dream of achieving it. The role of a design engineer is becoming more challenging. As per Moore

【 授权许可】

Unknown