Systematic study of thermal stability of AlGaN/GaN two-dimensional electron gas structure with SiN surface passivation

IEICE Electronics Express

Naoteru Shigekawa¹  Suehiro Sugitani¹  Kenji Shiojima¹ 

[1] NTT Photonics Laboratories, Nippon Telegraph and Telephone Corporation

关键词: AlGaN/GaN heterostructure;    SiN surface passivation;    sheet resistance;    thermal stability;    AlGaN thickness dependence;   

DOI  :  10.1587/elex.1.160

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)Cited-By(5)An annealing study of the AlGaN/GaN 2DEG structure for HEMTs with or without SiN surface passivation films was conducted with the AlGaN layer thickness dependence taken into consideration. Without SiN, the sheet resistance of the samples with thin AlGaN layers increased significantly upon annealing at 620 and 800°C. In contrast, samples with SiN were thermally stable after annealing at up to 800°C even when the AlGaN layer was as thin as 152Å. TEM observations revealed that neither surface roughness nor interfacial diffusion at the SiN/AlGaN interface occurred due to annealing. The SiN layer is very effective for passivating an AlGaN surface and improving the thermal stability of a thin-AlGaN 2DEG channel.

【 授权许可】

Unknown