InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform

IEICE Electronics Express

Yongpeng Cheng¹  Yuki Ikku¹  Shinichi Takagi¹  Mitsuru Takenaka¹ 

[1] Department of Electrical Engineering and Information Systems, the University of Tokyo

关键词: waveguide photodetector;    III-V CMOS photonics;   

DOI  :  10.1587/elex.11.20140609

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(18)Cited-By(4)An InGaAs metal-semiconductor-metal (MSM) photodetector (PD) monolithically integrated with an InP photonic-wire waveguide has been demonstrated by using III-V CMOS photonics platform. Owing to a Schottky contact between Ni and p-InGaAs, the MSM PD operation is obtained with a dark current of 270 nA at 1 V bias voltage. The 20-µm-long waveguide InGaAs PD exhibits responsivity of around 0.4 A/W and broadband operation covering the C- and L-bands, enabling wavelength division multiplexing (WDM) optical interconnects.

【 授权许可】

Unknown