期刊论文详细信息
IEICE Electronics Express | |
InGaAs MSM photodetector monolithically integrated with InP photonic-wire waveguide on III-V CMOS photonics platform | |
Yongpeng Cheng1  Yuki Ikku1  Shinichi Takagi1  Mitsuru Takenaka1  | |
[1] Department of Electrical Engineering and Information Systems, the University of Tokyo | |
关键词: waveguide photodetector; III-V CMOS photonics; | |
DOI : 10.1587/elex.11.20140609 | |
学科分类:电子、光学、磁材料 | |
来源: Denshi Jouhou Tsuushin Gakkai | |
【 摘 要 】
References(18)Cited-By(4)An InGaAs metal-semiconductor-metal (MSM) photodetector (PD) monolithically integrated with an InP photonic-wire waveguide has been demonstrated by using III-V CMOS photonics platform. Owing to a Schottky contact between Ni and p-InGaAs, the MSM PD operation is obtained with a dark current of 270 nA at 1 V bias voltage. The 20-µm-long waveguide InGaAs PD exhibits responsivity of around 0.4 A/W and broadband operation covering the C- and L-bands, enabling wavelength division multiplexing (WDM) optical interconnects.
【 授权许可】
Unknown
【 预 览 】
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RO201911300540533ZK.pdf | 2125KB | download |