A highly linear gilbert cell OTA with multiple gated transistors for non-coherent UWB receivers

IEICE Electronics Express

Mostafa Yargholi¹  Abdolreza Nabavi¹ 

[1] Department of Electrical Engineering, Tarbiat Modares University (TMU)

关键词: CMOS OTA;    linearization;    multiple gated transistors;   

DOI  :  10.1587/elex.6.756

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(5)This paper presents a highly linear Gilbert cell OTA by cancelling the second order transconductance derivative (gm″) of nMOS transistors near threshold voltage using the technique of multiple gated transistors. This gives rise to 5dB improvement in IIP3 of OTA, using a 0.13µm CMOS technology with 1.2V supply. Simulation results and analytical relations for THD and IIP3 in OTA illustrate the tradeoffs between linearity, bandwidth, and power dissipation. System level simulation of a non-coherent UWB receiver, with this OTA as a Gm-C integrator in receiver structure, illustrates an improvement of BER from 3e-2 to 1e-3. The power consumption, IIP3, and transconductance in OTA are 0.62mW, 20.5dBm, and 156µA/V, respectively.

【 授权许可】

Unknown