Optical properties of photo-electrochemical etching of anisotropic silicon (110)

IEICE Electronics Express

Maryam Amirhoseiny¹  Ng ShaShiong¹  Zainuriah Hassan¹ 

[1] Nano-Optoelectronics Research and Technology Laboratory, School of Physics Universiti Sains Malaysia

关键词: porous silicon (110);    electrochemical etching;    low-symmetry surface;    photoluminescence;    Raman spectroscopy;   

DOI  :  10.1587/elex.9.752

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(16)Cited-By(3)Photo-electrochemical etched Si layers were prepared on n-type (110) oriented silicon wafer. SEM results shows groove structure for etched Si (110). The photoluminescence (PL), Fourier transformed infrared (FTIR) absorption and Raman spectroscopy of etched Si (110) as a function of etching time was studied. All samples showed a PL peak in the visible spectral and the intensity of the PL peak increases with rising of the etching time. It is also found that the Raman peak of the etched Si samples is red shifted and its intensity significantly decreases as the etching time increases.

【 授权许可】

Unknown