Research on single-event transient mechanism in a novel SOI CMOS technology

IEICE Electronics Express

Hui Yang¹  Chao Zhang¹  Yaqing Chi¹  Jianjun Chen¹ 

[1] School of Computer, National University of Defense Technology

关键词: single event transient (SET);    a novel SOI CMOS technology;    radiation hardened by design (RHBD);   

DOI  :  10.1587/elex.11.20140518

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(12)Cited-By(1)For the first time, compared with common bulk PMOSFETs, single-event transient (SET) mechanism was researched in a novel SOI PMOSFETs using technology computer-aided design mixed-mode numerical (TCAD) simulations. The simulation results showed that, different from the common bulk CMOS technology, diffusion but not bipolar effect is the main mechanism in PMOSFETs fabricated in this novel SOI CMOS technology. The effects of buried oxide (BOX) layer and body tie on SET were also discussed for the PMOSFETs in this technology. The radiation hardened by design (RHBD) layout technique was proposed for further SET mitigation. All of the studies indicated that this novel SOI CMOS technology has the essential advantage for radiation hardened integrated circuit (IC) design.

【 授权许可】

Unknown