Optical gating width variability using electrode parasitic capacitance

IEICE Electronics Express

Akihito Otani¹  Shinichi Onuki¹  Atsushi Yamada²  Yoshiharu Shimose¹  Kenji Kawano¹  Yasuaki Nagashima¹ 

[1] Anritsu Corporation;Anritsu Device Co., Ltd.

关键词: optical switches;    optical modulation;   

DOI  :  10.1587/elex.13.20160363

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(14)We developed an optical gating device using a bulk layer and high mesa ridge/BH hybrid structure with input power of 14.5 dBm for optical communication performance monitoring. The shortest gating width of 3.9 ps was obtained in all-optical sampling experiments. However, gated waveform distortion occurred due to superfluous carriers in absorption layer in case of low bias voltage and optical pumping power condition. We have successfully improved waveform quality by extension electric parasitic capacitance to draw out it, thus variable gating width depending on transmission speed has been realized.

【 授权许可】

Unknown