Thermal Decomposition of Silicon-rich Oxides Deposited by the LPCVD Method

Croatica Chemica Acta

Moser, Enrico²  Chiasera, Alessandro¹  Ristić, Davor¹  Ivanda, Mile³  Ferrari, Maurizio¹  Furić, Krešimir³ 

[1] CNR-IFN, Istituto di Fotonica e Nanotecnologie, CSMFO Lab, via alla Cascata 56/C,Povo, 38123, Italy;Nanoscience Laboratory, Department of Physics, University of Trento, Via Sommarive 14, Povo 38123, Italy;Ruđer Bošković Institute, Bijenička cesta 54, 10000 Zagreb, Croatia

关键词: LPCVD;    silicon;    thermal decomposition;    thin films;   

DOI  :  

学科分类：化学（综合）

来源: Croatica Chemica Acta

【 摘 要 】

Silicon-rich oxide (SiOx, 0 < x < 2) thin films were deposited using the Low Pressure Chemical Vapor Deposition (LPCVD) method at temperature of 570 °C using silane (SiH4) and oxygen as the reactant gasses. The films were annealed at...

【 授权许可】

Unknown