Deep Defects Annihilation in GaAs1-xNx Layers by Si-doping | Science Publications

American Journal of Applied Sciences

S. Ben Bouzid¹  A. Hamdouni¹  F. Bousbih¹  J. Rihani¹  N. Ben Sedrine¹ 

关键词: GaAs¹;    1-xNx;    molecular beam epitaxy;    photoluminescence spectroscopy;    Si-doping;    deep defects;   

DOI  :  10.3844/ajassp.2007.19.22

学科分类：自然科学（综合）

来源: Science Publications

【 摘 要 】

The photoluminescence (PL) properties of Si-doped GaAs_0.985N_0.015 with different silicon content were investigated. The study was carried out on a set of three samples grown by Molecular Beam Epitaxy (MBE) on GaAs (001) oriented substrate using a radio frequency nitrogen beam source. For all samples, the PL measurements show the presence of a wide band situated at 0.83 eV which intensity decreases by increasing silicon content. This wide band was attributed to the presence of deep localized states induced by a three-dimensional growth of the GaAsN layer. In addition, these deep localized states are annihilated by the free carriers from silicon atoms. PL measurements in the range of 10 to 300 K were also performed to identify the band gap energy of GaAs_1-xN_x structure. The decrease of the activation energies with increasing silicon content was observed.

【 授权许可】

Unknown