A novel progressive trigger method of di/dt control for MOSFET

IEICE Electronics Express

Bo Zhang¹  Qing Hua¹  Gao Pan¹  Jiangping He¹ 

[1] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

关键词: progressive Trigger;    di/dt control;    gate driver;   

DOI  :  10.1587/elex.12.20151006

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(19)A novel progressive trigger (PT) method of di/dt control for MOSFET is presented in this paper. The principle of the proposed method is based on the progressive trigger current during ON and OFF states by variable channel width for MOSFET. The experimental results show that the di/dt reduces from 105 mA/nS to 57 mA/nS for OFF state, and from 110 mA/nS to 86.7 mA/nS for ON state with RON = 0.5 Ω and Vgg = 3 V. The flexibility of the method is easy to implement in integrated circuits.

【 授权许可】

Unknown