Reverse Doppler effect in left-handed travelling-wave field-effect transistors

IEICE Electronics Express

Koichi Narahara¹ 

[1] Graduate School of Science and Engineering, Yamagata University

关键词: reverse Doppler effect;    left-handed waves;    traveling-wave field-effect transistors;   

DOI  :  10.1587/elex.10.20120963

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(9)We investigate left-handed (LH) travelling-wave field-effect transistors (TWFETs) to observe the reverse Doppler effect. Due to the nonlinearity, a TWFET can support shock fronts that can reflect incoming waves. By introducing the composite right/left-handed line structure to a TWFET, it enables to support LH waves. Because the shock front functions as a moving reflection wall to the incoming LH waves, we can expect the reverse Doppler effect to cause in an LH TWFET. After explaining the structure and fundamental properties, we report the reverse Doppler effect observed experimentally in the devise.

【 授权许可】

Unknown