Capacitive pressure sensor with wafer-through silicon vias using SOI-Si direct wafer bonding and glass reflow technique

IEICE Electronics Express

Jun-Ku Kim¹  Chang-Wook Baek¹ 

[1] School of Electrical and Electronics Engineering, Chung-Ang University

关键词: capacitive pressure sensor;    wafer-through silicon vias;    direct wafer bonding;    glass reflow technique;   

DOI  :  10.1587/elex.10.20130453

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(8)Cited-By(1)A micromachined capacitive pressure sensor with a single crystal silicon membrane and wafer-through silicon via electrodes embedded in the glass substrate is demonstrated. SOI (silicon-on-insulator)-Si direct wafer bonding and reflow technique of the bonded glass wafer are combined to fabricate the pressure sensor. The proposed process enables to access the sensing capacitor easily from the backside of the substrate without bondwires on the front, and helps to achieve uniform sensor performances thanks to the uniform thickness of the SOI device layer. The fabricated sensors show an initial capacitance of 7.68±0.39pF with an averaged sensitivity of 1.29±0.06fF from 0 to 360 Torr.

【 授权许可】

Unknown