Fabrication of tunneling dielectric thin-film transistor with very thin SiNx films onto source and drain

IEICE Electronics Express

Kensaku Ohkura²  Naoto Matsuo¹  Akira Heya¹  Shin Yokoyama²  Atsushi Fukushima¹ 

[1] Department of Materials Science & Chemistry, University of Hyogo;Research Center for Nanodevices and Systems, Hiroshima University

关键词: TFT;    tunneling effect;    SiNx;    gate-off current;   

DOI  :  10.1587/elex.4.442

学科分类：电子、光学、磁材料

来源: Denshi Jouhou Tsuushin Gakkai

【 摘 要 】

References(7)Tunneling Dielectric Thin-Film Transistor (TDTFT), which was proposed to reduce the gate-off current by utilizing a tunneling effect, was fabricated in a bottom-gate structure. For the tunneling dielectric, a 1.7-nm-thick SiNx film was deposited onto the source and drain by a low-pressure chemical vapor deposition (LPCVD) method. The gate-off current of the TDTFT was reduced less than 1/10 in comparison with a conventional TFT. Although the subthreshold characteristics and the gm were degraded due to the tunnel resistance, it will be compensated by further thinning of SiNx film or using the material with the barrier height lower than SiNx.

【 授权许可】

Unknown